SiC MOSFET
相对于硅基器件,碳化硅(SiC)MOSFET具有更低的导通损耗、更快的开关速度和工作频率,适用于更高效、更紧凑的应用场景。
PDFN8*8 系列碳化硅(SiC)MOSFET
1. 高开关速度,低开关损耗 ;
2. 高功率密度和紧凑设计;
3. 参数范围:
VDS:650V/1200V
ID:8~60A
RDS(on) :35~320mΩ
Product SKU | VDS | RDS(on) @25℃ | ID | VGS | Status | Data Sheet |
---|---|---|---|---|---|---|
ASR35N650MD88 | 650V | 35mΩ | 60A | 18V | Product | |
ASR60N650MD88 | 650V | 60mΩ | 30A | 18V | Product | |
ASR320N650MD88 | 650V | 320mΩ | 8A | 12V | Product | |
ASR50N1200MD88 | 1200V | 50mΩ | 60A | 18V | Product | |
ASR80N1200MD88 | 1200V | 80mΩ | 30A | 18V | Product | |
ASR160N1200MD88PB | 1200V | 160mΩ | 20A | 15V | Product |