SiC MOSFET
相对于硅基器件,碳化硅(SiC)MOSFET具有更低的导通损耗、更快的开关速度和工作频率,适用于更高效、更紧凑的应用场景。
TO-247-3 系列碳化硅(SiC)MOSFET
1. 高开关速度,低开关损耗;
2. 高耐压,低导通电阻,高散热性能;
3. 参数范围:
VDS:650V/1200V/1700V
ID:5~100A
RDS(on) :12~750mΩ
Product SKU | VDS | RDS(on) @25℃ | ID | VGS | Status | Data Sheet |
---|---|---|---|---|---|---|
ASC100N650MT3 | 650V | 12mΩ | 100A | 18V | Product | |
ASC60N650MT3 | 650V | 38mΩ | 60A | 18V | Product | |
ASC30N650MT3 | 650V | 60mΩ | 30A | 18V | Product | |
ASC100N1200MT3 | 1200V | 16mΩ | 100A | 18V | Product | |
ASC60N1200MT3 | 1200V | 45mΩ | 60A | 18V | Product | |
ASC30N1200MT3 | 1200V | 80mΩ | 30A | 18V | Product | |
ASC20N1200MT3PB | 1200V | 160mΩ | 20A | 18V | Product | |
ASC100N1700MT3 | 1700V | 25mΩ | 100A | 18V | Product | |
ASC100N1700MT3PB | 1700V | 25mΩ | 100A | 15V | Product | |
ASC40N1700MT3 | 1700V | 72mΩ | 40A | 18V | Product | |
ASC5N1700MT3PB | 1700V | 750mΩ | 5A | 12V | Product |