SiC MOSFET
相对于硅基器件,碳化硅(SiC)MOSFET具有更低的导通损耗、更快的开关速度和工作频率,适用于更高效、更紧凑的应用场景。
TO-247-4 系列碳化硅(SiC)MOSFET
1. 高开关速度,低开关损耗;
2. 优化驱动设计,减少寄生电感影响;
3. 参数范围:
VDS:650V/1200V/1700V
ID:20~200A
RDS(on) :12~160mΩ
Product SKU | VDS | RDS(on) @25℃ | ID | VGS | Status | Data Sheet |
---|---|---|---|---|---|---|
ASC100N650MT4 | 650V | 12mΩ | 100A | 18V | Product | |
ASC100N650MT4PB | 650V | 12mΩ | 100A | 15V | Product | / |
ASC60N650MT4 | 650V | 38mΩ | 60A | 18V | Product | |
ASC30N650MT4 | 650V | 60mΩ | 36A | 18V | Product | |
ASC30N650MT4PB | 650V | 60mΩ | 30A | 15V | Product | / |
ASC200N1200MT4 | 1200V | 8mΩ | 200A | 18V | Product | |
ASC150N1200MT4 | 1200V | 10mΩ | 150A | 15V/18V | Product | |
ASC100N1200MT4 | 1200V | 16mΩ | 115A | 18V | Product | |
ASC100N1200MT4PB | 1200V | 20mΩ | 100A | 15V | Product | |
ASC75N1200MT4PB | 1200V | 30mΩ | 75A | 15V | Product | |
ASC60N1200MT4 | 1200V | 45mΩ | 60A | 18V | Product | |
ASC60N1200MT4PB | 1200V | 45mΩ | 60A | 15V | Product | |
ASC30N1200MT4 | 1200V | 80mΩ | 32A | 18V | Product | |
ASC30N1200MT4PB | 1200V | 80mΩ | 30A | 15V | Product | |
ASC20N1200MT4PB | 1200V | 160mΩ | 20A | 15V | Product | |
ASC100N1700MT4PB | 1700V | 25mΩ | 100A | 15V | Product |