SiC MOSFET
相对于硅基器件,碳化硅(SiC)MOSFET具有更低的导通损耗、更快的开关速度和工作频率,适用于更高效、更紧凑的应用场景。
TOLL 系列碳化硅(SiC)MOSFET
1. 高功率密度和紧凑设计;
2. 低热阻与优秀散热能力 ;
3. 参数范围:
VDS:650V/1200V
ID:20~100A
RDS(on) :12~160mΩ
Product SKU | VDS | RDS(on) @25℃ | ID | VGS | Status | Data Sheet |
---|---|---|---|---|---|---|
ASR12N650MD02 | 650V | 12mΩ | 100A | 18V | Product | |
ASR35N650MD02 | 650V | 35mΩ | 60A | 18V | Product | |
ASR16N1200MD02 | 1200V | 16mΩ | 100A | 18V | Product | |
ASR20N1200MD02PB | 1200V | 20mΩ | 100A | 15V | Product | |
ASR45N1200MD02 | 1200V | 45mΩ | 60A | 18V | Product | |
ASR80N1200MD02 | 1200V | 80mΩ | 30A | 18V | Product | |
ASR160N1200MD02PB | 1200V | 160mΩ | 20A | 15V | Product |